Flux growth and characterization of an FeSi4P4 single crystal
Tongtong Yu, Shanpeng Wang,* Huapeng Ruan, Chunlong Li, Xixia Zhang, Ning Jia, Jian Zhang and Xutang Tao*
RSC Advances. 2017, 7, 47938–47944
Abstract
Herein, a single crystal of FeSi4P4 (FSP) with dimensions up to 8×7×3 mm3 was successfully grown using a seeded flux growth method. Single crystal X-ray diffraction results revealed that the FSP crystal crystallized in the chiral space group P1 (no. 1). High-resolution X-ray diffraction presents a full-width at half-maximum (FWHM) of 36’’ and 46’’ for the (100) and (001) FSP crystals, respectively, which indicates that FSP crystals have high crystalline quality. FSP is thermally stable up to 1157.1 oC and has a high thermal conductivity of 35 W/ (m·K) at room temperature. The magnetic analysis shows that the FSP crystal is paramagnetic in the range from 5 to 300 K. The Hall effect measurement suggests that the FSP crystal is a promising p-type semiconductor at room temperature.
